20-*b06ipb006rc01-p953a45* target datasheet flow ipm 1b 600 v / 6 a input rectifier, pfc-boost with integrated dc-capacitor, pfc-shunt and pfc-gate driver 3 phase inverter with integrated dc shunt, gate driver circuit incl. bootstrap circuit and over current protection sense output of dc-current temperature sensor low power industrial drives motor integrated fans and pumps aircon electrical tools types 20-1B06IPB006RC01-P953A45 20-pb06ipb006rc01-p953a45y t j =25c, unless otherwise specified parameter symbol value unit repetitive peak reverse voltage v rrm 1600 v t h =80c 1 2 t c =80c 1 6 t h =80c 2 0 t c =80c 3 0 maximum junction temperature t j max 1 50 c pfc igbt collector-emitter break down voltage v ce 650 v t h =80c 1 7 t c =80c 2 3 t h =80c 3 0 t c =80c 4 5 maximum junction temperature t j max 1 75 c 45 45 w a power dissipation p tot dc collector current t urn off safe operating area pulsed collector current p tot i 2 t t j =t j max w a a i c t j =t j max v ce 650v, t j t op max t j =t j max p ower dissipation maximum ratings i fav a 2 s i fsm condition a a dc forward current 110 t j =t j max 1 50 i2t-value input rectifier diode surge forward current t j =25c 5 0 hz half sine wave t p =10ms flow 1b housing target applications schematic conclusive power flow, all power connections on one side, no input output x-ing features t p limited by t j max i cpulse solder pins press fit pins copyright vincotech 1 19 nov. 2014 / revision 2
20-*b06ipb006rc01-p953a45* target datasheet t j =25c, unless otherwise specified parameter symbol value unit maximum ratings condition pfc inverse diode t h =80c 9 t c =80c 1 2 t h =80c 1 6 t c =80c 2 4 pfc diode t h =80c 1 9 t c =80c 2 5 t h =80c 2 9 t c =80c 4 4 inverter transistor t h =80c 7 t c =80c 1 0 t h =80c 2 7 t c =80c 4 1 t sc t j 1 25c 5 s v cc v ge =15v 4 00 v inverter diode t h =80c 4 t c =80c 5 t h =80c 8 t c =80c 1 2 175 30 18 175 600 175 650 t j =t j max t j =t j max t j =t j max t p limited by t j max d c forward current a v ce i c p tot i f i frm a t p limited by t j max 1 2 w t j =t j max t p limited by t j max a v ce 600v, tj 125c a 18 a t j =t j max v d c forward current repetitive peak forward current t j max w a t j =t j max a c power dissipation maximum junction temperature maximum junction temperature peak repetitive reverse voltage c 175 650 v rrm t j max v v rrm v d c forward current peak repetitive reverse voltage collector-emitter break down voltage dc collector current maximum junction temperature power dissipation repetitive peak forward current p tot i f t p limited by t j max t j =t j max i frm peak repetitive reverse voltage r epetitive peak forward current power dissipation maximum junction temperature short circuit ratings turn off safe operating area pulsed collector current power dissipation w c c v a w a 8 600 i cpulse t j max v rrm p tot t j max i frm p tot i f t j =t j max copyright vincotech 2 19 nov. 2014 / revision 2
20-*b06ipb006rc01-p953a45* target datasheet t j =25c, unless otherwise specified parameter symbol value unit maximum ratings condition pfc driver* v ceo 45 v t j max 1 50 c * for more information see infineon's datasheet bc817 dc - shunt pfc shunt dc link capacitor gate driver* * for more information see infineon's datasheet 6ed003l02-f2 thermal properties insulation properties v is t=2s d c voltage 4000 v min 12,7 mm min 12,7 mm cti >200 1000 comparative tracking index insulation voltage creepage distance t op operation temperature under switching condition c learance -40+(tjmax - 25) c storage temperature t stg -40+125 c t c =25c m ax.dc voltage v max 500 c ollector-emitter voltage power dissipation peak collector current i f power dissipation m aximum junction temperature dc forward current base current collector current p tot t c =25c t c =25c 9 1 0 t c =25c w a 5 00 100 i bm peak base current i c i b i cm t p 1 0 ms p tot v cc input voltage (lin, hin, en) u in supply voltage 3 ,2 w v cc common with pfc controller v v cc + 0.5 output voltage (fault) u out v v 2 0 v 10 200 ma copyright vincotech 3 19 nov. 2014 / revision 2
20-*b06ipb006rc01-p953a45* target datasheet p arameter symbol unit v ge [v] or v gs [v] v r [v] or v ce [v] or v ds [v] i c [a] or i f [a] or i d [a] t j min typ max tj=25c 0,8 1,15 1,4 tj=125c 1,10 tj=25c 0,90 tj=125c 0,79 tj=25c 20 tj=125c 26 tj=25c 0,7 tj=125c thermal resistance chip to heatsink phase-change material =3,4w/mk 3, 54 k/w * chip data tj=25c 3,3 4 4,7 tj=150c tj=25c 1,6 2,2 tj=150c tj=25c 0,04 tj=150c tj=25c 120 tj=150c none thermal resistance chip to heatsink r thjh 3,18 * chip data tj=25c 1,23 1,55 1,87 tj=125c thermal resistance chip to heatsink r thjh 3,70 tj=25c 1,35 1,77 tj=150c tj=25c 0,94 tj=150c thermal resistance chip to heatsink r thjh phase-change material =3,4w/mk 3, 27 k/w * chip data m k/w a v n a v v m a v n c p f k/w 69 1500 20 0 pfc shunt r1 value 0 52 0 25 0 15 650 output capacitance reverse transfer capacitance tj=25c tj=25c 15 6 9300 4 38 24 15 15 650 reverse current i r v v m ma 12 1 2 12 characteristic values forward voltage * t hreshold voltage (for power loss calc. only) slope resistance (for power loss calc. only) v f v to r t input rectifier diode 0,0004 value co nditions r thjh gate resistor input capacitance gate charge diode forward voltage reverse leakage current pfc diode forward voltage * pfc inverse diode i rm c rss c oss v f i ges integrated gate resistor v f v ge(th) q gate c ies r gint r gate collector-emitter saturation voltage* pfc igbt gate emitter threshold voltage v ce(sat) gate-emitter leakage current i ces collector-emitter cut-off v ge =v ce phase-change material =3,4w/mk f= 1mhz phase-change material =3,4w/mk r 1 5 1 0 copyright vincotech 4 19 nov. 2014 / revision 2
20-*b06ipb006rc01-p953a45* target datasheet p arameter symbol unit v ge [v] or v gs [v] v r [v] or v ce [v] or v ds [v] i c [a] or i f [a] or i d [a] t j min typ max characteristic values value c onditions tj=25c 1,88 2,10 2,42 tj=150c tj=25c 0,002 tj=150c tj=25c 120 tj=150c thermal resistance chip to heatsink r thjh phase-change material =3,4w/mk 3, 55 k/w * chip data tj=25c 1 1,97 2,6 tj=150c 1,94 tj=25c 3 tj=150c 4 tj=25c 222 tj=150c 335 tj=25c 0,23 tj=150c 0,46 di(rec)max tj=25c 453 /dt tj=150c 180 tj=25c 0,07 tj=150c 0,13 thermal resistance chip to heatsink r thjh phase-change material =3,4w/mk 12,20 k/w * chip data 470 tj=25c mws a/s ma ns nc v na v pf a tj=25c 6 4 c value c dc link capacitor r 40 0 25 peak rate of fall of recovery current r2 value dc - shunt in verter diode peak reverse recovery current re verse recovered charge input capacitance reverse recovery time reverse recovered energy reverse transfer capacitance diode forward voltage * 15 5 0 collector-emitter saturation voltage* gate-emitter leakage current output capacitance inverter transistor collector-emitter cut-off current incl. diode i ges v ce(sat) i ces c ies c rss c oss q rr t rr i rrm v f rgon=0 f=1mhz er ec 0 20 0 nf 100 35 m 600 0 1 4 2 4 copyright vincotech 5 19 nov. 2014 / revision 2
20-*b06ipb006rc01-p953a45* target datasheet p arameter symbol unit v ge [v] or v gs [v] v r [v] or v ce [v] or v ds [v] i c [a] or i f [a] or i d [a] t j min typ max characteristic values value c onditions gate driver supply voltage v cc tj=25c tj=125c 13 15 17,5 v quiescent vcc supply current i qcc tj=25c tj=125c 1,3 2 ma input voltage (lin, hin, en) v in tj=25c tj=125c 0 5 input voltage (gate) v gate tj=25c tj=125c 0 15 logic "0" input voltage (lin, hin) v ih tj=25c tj=125c 1,7 2,1 2,4 logic "1" input voltage (lin, hin) v il tj=25c tj=125c 0,7 0,9 1,1 positive going threshold voltage (en) v en, th+ tj=25c tj=125c 1,9 2,1 2,3 negative going threshold voltage (en) v en, th- tj=25c tj=125c 1,1 1,3 1,5 input clamp voltage (lin, hin, en) v in, clamp i in = 4ma tj=25c tj=125c 9 10,3 12 itrip positive going threshold v it, th+ tj=25c tj=125c 380 445 510 mv input bias current lin high i lin+ v lin = 3,3v tj=25c tj=125c 70 100 input bias current lin low i lin- v lin = 0v tj=25c tj=125c 110 200 input bias current hin high i hin+ v hin = 3,3v tj=25c tj=125c 70 100 input bias current hin low i hin- v hin = 0v tj=25c tj=125c 110 200 input bias current en high i en+ v hin = 3,3v tj=25c tj=125c 45 120 output voltage (fault) v flt tj=25c tj=125c 0 v cc v low on resistor of pull down trans. (fault) r on, flt v fault =0.5 v tj=25c tj=125c 45 100 pulse width for on or off t in tj=25c tj=125c 1 s tu rn-on propagation delay (lin, hin) t on v lin/hin = 0v or 3,3v tj=25c tj=125c 400 530 800 turn-off propagation delay (lin, hin) t off v lin/hin = 0v or 3,3v tj=25c tj=125c 360 490 760 fault reset time t rst tj=25c tj=125c 4 ms f ixed deadtime between high and low side t dt v lin/hin = 0v & 3,3v tj=25c tj=125c 150 310 ns b ase resistor r b 100 base pull down resistor r bpd 2,7 k thermal resistance junction - heat sink r thjs 105 k/w dc characteristics 160 250 400 100 collector-emitter saturation voltage v cesat 0,7 base emitter saturation voltage v besat 1,2 ac characteristics transition frequency f t 170 mhz collector-base capacitance c cb 6 emitter-base capacitance c eb 60 v cc = 15v v lin =0v; v hin =3,3v thermistor deviation of r25 ? r/r 2 0 0 tj=25c rated resistance r power dissipation constant tc=100c tc=100c tj=25c mw/k power dissipation p mw 2 22000 5 v a n s % t j=25c t j =25c -5 k 3950 k 3998 b-value b (25/50) b-value b (25/100) vincotech ntc reference tj=25c b v dc current gain i c =300 ma, v ce =1 v i c =50 ma, v ce =5 v, f=100 mhz f=1 mhz, v be =10 v h fe tol. 3% tol. 3% i c =500 ma, i b =50 ma pfc driver tj=25c i c =100 ma, v ce =1 v pf v eb = 0,5 v, f=1 mhz tj=25c copyright vincotech 6 19 nov. 2014 / revision 2
20-*b06ipb006rc01-p953a45* target datasheet ordering code in datamatrix as in packaging barcode as 20-1B06IPB006RC01-P953A45 p953a45 p953a45 20-pb06ipb006rc01-p953a45y p953a45y p953a45y x y 45 0 42 0 39 0 36 0 33 0 30 0 27 0 24 0 21 0 18 0 15 0 12 0 9 0 6 0 3 0 0 0 -0,2 26,4 4,8 26,4 9,8 26,4 14,8 26,4 19,8 26,4 22,5 26,4 25,2 26,4 30,2 26,4 35,2 26,4 40,2 26,4 45,2 26,4 outline p inout ordering code & marking ordering code and marking - outline - pinout version wi thout thermal paste 17mm housing pin table pin 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 27 without thermal paste 17mm housing pressfit pins 23 24 25 26 19 20 21 22 copyright vincotech 7 19 nov. 2014 / revision 2
20-*b06ipb006rc01-p953a45* target datasheet product status definitions formative or in design disclaimer life support policy as used here in: target product status datasheet status definition this datasheet contains the design specifications for product development. specifications may change in any manner without notice. the data contained is exclusively intended for technically trained staff. vincotech products are not authorised for use as critical components in life support devices or systems without the express written approval of vincotech. 1. life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in labelling can be reasonably expected to result in significant injury to the user. 2. a critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. the information given in this datasheet describes the type of component and does not represent assured characteristics. for tested values please contact vincotech.vincotech reserves the right to make changes without further notice to any products herein to improve reliability, function or design. vincotech does not assume any liability arising out of the application or use of any product or circuit described herein; neither does it convey any license under its patent rights, nor the rights of others. copyright vincotech 8 19 nov. 2014 / revision 2
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